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  Datasheet File OCR Text:
 Ordering number : ENN8056
2SK3818
2SK3818
Features
* * * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 74 296 1.65 75 150 --55 to +150 410 74 Unit V V A A W W C C mJ A
Note : *1 VDD=20V, L=100H, IAV=74A *2 L100H, single pulse
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=37A ID=37A, VGS=10V ID=37A, VGS=4V Ratings min 60 1 10 1.2 27 45 10 13 13 18 2.6 typ max Unit V
A A
V S m m
Marking : K3818
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2404QA TS IM TB-00000613 No.8056-1/4
2SK3818
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0 Ratings min typ 5250 780 525 38 315 370 310 100 18 16 1.13 1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Package Dimensions unit : mm 2093A
0.9
Package Dimensions unit : mm 2090A
4.5 1.3
10.2 4.5
10.2
0.8
1.3
11.5
8.8
9.9
1.5max 8.8
1.6
20.9
1.2
3.0
11.0
9.4
0.8
0.4 1 2 3
2.7
2.55
1.2 2.55
1.35
1 0.8
2
3 0 to 0.3 0.4
1 : Gate 2 : Drain 3 : Source SANYO : SMP
1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
2.55
2.55
2.55
2.55
Switching Time Test Circuit
VDD=30V VIN 10V 0V VIN ID=37A RL=0.81
Unclamped Inductive Test Circuit
50 RG
2.7
1.4
L DUT
D
PW=10s D.C.1%
VOUT
G
15V 0V
50
VDD
2SK3818 P.G 50
S
No.8056-2/4
2SK3818
90 80
ID -- VDS
Tc=25C
10 V
90
ID -- VGS
5C
80
25 C
=7 5 C
1.0 1.5 2.0 2.5 3.0
VDS=10V
70
Drain Current, ID -- A
60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain Current, ID -- A
60 50 40 30 20 10 0 0 0.5
Tc
VGS=3V
25
C --25 C
3.5 4.0
Tc= --2
8V
70
4V
75 C
4.5 IT07835 150 IT07837 1.4 IT07839 30 IT07841
Drain-to-Source Voltage, VDS -- V
30
6V
IT07834 30
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
ID=37A
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- m
25
Static Drain-to-Source On-State Resistance, RDS(on) -- m
25
20
20
15
Tc=75C
15
I D=
, VG 37A
4V S=
10
25C --25C
10
, 37A I D=
=10V VGS
5
5
0 2 3 4 5 6 7 8 9 10 IT07836
0 --50
--25
0
25
50
75
100
125
Gate-to-Source Voltage, VGS -- V
100
yfs -- ID
Case Temperature, Tc -- C
100 7 5 3 2
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
7 5
VDS=10V
Forward Current, IF -- A
3 2 10 7 5 3 2 1.0 7 5 0.1
25
C
= Tc
5C --2
10 7 5 3 2 1.0 7 5 3 2
75
C
Tc=7 5C
0.1 7 5 3 2 0.01 0.2
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
1000 7
5 7 100 IT07838
0.4
0.6
--25C
0.8
25C
1.0
1.2
SW Time -- ID
td(off)
10000 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=30V VGS=10V
Switching Time, SW Time -- ns
5 3 2
Ciss
Ciss, Coss, Crss -- pF
tf
3 2
100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT07840
tr
1000 7 5 3 0 5 10
Coss
Crss
td(on)
15
20
25
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No.8056-3/4
2SK3818
10 9
VGS -- Qg
VDS=30V ID=74A Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
ASO
IDP=296A
10
10
ID=74A
s
8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100
0
s
Operation in this area is limited by RDS(on).
1m 10 s ms 1 DC 00m s op era tio n
0.1 0.1
Tc=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3
Total Gate Charge, Qg -- nC
2.0
IT07842 90
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
5 7 100 IT07843
PD -- Tc
Allowable Power Dissipation, PD -- W
1.65 1.5
80 75 70 60 50 40 30 20 10 0
1.0
0.5
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Amibient Tamperature, Ta -- C
IT07811
Case Tamperature, Tc -- C
IT07844
Note on usage : Since the 2SK3818 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice.
PS No.8056-4/4


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